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1

Effects of tunnel oxide process on SONOS flash memory characteristics

Dong Hua Li, Il Han Park, Jang-Gn Yun, Byung-Gook Park

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 680 KB

english, 2010

2

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

Yoon Kim, Jang-Gn Yun, Se Hwan Park, Wandong Kim, Joo Yun Seo, Myounggon Kang, Kyung-Chang Ryoo, Jeong-Hoon Oh, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 2.40 MB

english, 2012

3

Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Sangwoo Kang, Dong-Hua Lee, Seongjae Cho, Doo-Hyun Kim, Gil Sung Lee, Won-Bo Sim, Younghwan Son, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 717 KB

english, 2008

4

3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture

Jang-Gn Yun, Jong Duk Lee, Byung-Gook Park

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.33 MB

english, 2011

5

LAyer Selection by ERase (LASER) With an Etch-Through-Spacer Technique in a Bit-Line Stacked 3-D nand Flash Memory Array

Jang-Gn Yun, Se Hwan Park, Byung-Gook Park

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.05 MB

english, 2011

6

Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

Jang-Gn Yun, Kim, G., Joung-Eob Lee, Yoon Kim, Won Bo Shim, Jong-Ho Lee, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.41 MB

english, 2011

7

Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application

Jang-Gn Yun, Seongjae Cho, Byung-Gook Park

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.13 MB

english, 2011

8

Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Daewoong Kang, Myoungrack Lee, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.09 MB

english, 2009

9

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Vertical channel double split-gate (VCDSG) flash memory

Yun, Jang-Gn, Park, Il Han, Lee, Jung Hoon, Park, Se-Hwan, Kim, Yoon, Lee, Dong Hua, Cho, Seongjae, Kim, Doo-Hyun, Lee, Gil Sung, Sim, Won Bo, Lee, Jong-Duk, Park, Byung-Gook

Year:

2008

Language:

english

File:

PDF, 2.15 MB

english, 2008

10

The meta-stable dip (MSD) effect in SOI FinFETs

Jang-Gn Yun, Maryline Bawedin, Sorin Cristoloveanu, Denis Flandre, Hi-Deok Lee

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 217 KB

english, 2007

11

A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node

Seongjae Cho, Won Bo Shim, Yoon Kim, Jang-Gn Yun, Jong Duk Lee, Hyungcheol Shin, Jong-Ho Lee, Byung-Gook Park

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

12

A 2-Bit Recessed Channel Nonvolatile Memory Device With a Lifted Charge-Trapping Node

Jang-gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, Byung-gook Park

Journal:

IEEE Transactions on Nanotechnology

Year:

2009

Language:

english

File:

PDF, 689 KB

english, 2009

13

[IEEE Extended Abstracts of the Fourth International Workshop on Junction Technology - Shanghai, China (15-16 March 2004)] The Fourth International Workshop on Junction Technology, 2004. IWJT '04. - Novel NiSi technology utilizing Ti/Ni/TiN structure and fluorine implantation for thermal stability improvement by suppression of abnormal oxidation

Jang-Gn Yun,, Soon-Young Oh,, Hee-Hwan Ji,, Bin-Feng Huang,, Young-Ho Park,, Jin-Suk Wang,, Hi-Deok Lee,

Year:

2004

Language:

english

File:

PDF, 303 KB

english, 2004

14

[IEEE 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009) - Portland, OR (2009.10.25-2009.10.28)] 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Dependence of program and erase speed on bias conditions for fully depleted channel of vertical NAND flash memory devices

Seongjae Cho,, Yoon Kim,, Jang-Gn Yun,, Jung Hoon Lee,, Won Bo Shim,, Byung-Gook Park,

Year:

2009

Language:

english

File:

PDF, 4.58 MB

english, 2009

15

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Gated Twin-Bit (GTB) nonvolatile memory device and its operation

Cho, Seongjae, Park, Il Han, Lee, Jung Hoon, Yun, Jang-Gn, Kim, Doo-Hyun, Lee, Gil Sung, Shin, Hyungcheol, Lee, Jong Duk, Park, Byung-Gook

Year:

2008

Language:

english

File:

PDF, 1.92 MB

english, 2008

16

Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance

Kim, Wandong, Lee, Jung Hoon, Yun, Jang-Gn, Cho, Seongjae, Li, Dong-Hua, Kim, Yoon, Kim, Doo-Hyun, Lee, Gil Sung, Park, Se-Hwan, Shim, Won Bo, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 528 KB

english, 2010

17

[IEEE Extended Abstracts of the Fourth International Workshop on Junction Technology - Shanghai, China (15-16 March 2004)] The Fourth International Workshop on Junction Technology, 2004. IWJT '04. - Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nanoscale complementary metal oxide semiconductor (CMOS) application

Jang-Gn Yun,, Soon-Young Oh,, Hee-Hwan Ji,, Bin-Feng Huang,, Young-Ho Park,, Seong-Hyung Park,, Heui-Seung Lee,, Dae-Byung Kim,, Ui-Sik Kim,, Han-Seob Cha,, Sang-Bum Hu,, Jeong-Gun Lee,, H

Year:

2004

Language:

english

File:

PDF, 229 KB

english, 2004

18

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Room temperature behavior of poly-silicon quantum dot single electron transistors

Kang, Kwon-Chil, Yang, Hong Sun, Lee, Joung-eob, Yun, Jang-Gn, Lee, Jung Han, Lee, Dong-Seup, Park, Sang Hyuk, Lee, Jong Duk, Park, Byung-Gook

Year:

2008

Language:

english

File:

PDF, 2.01 MB

english, 2008

19

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation

Kim, Yoon, Yun, Jang-Gn, Park, Il Han, Cho, Seongjae, Lee, Jung Hoon, Park, Se-Hwan, Lee, Dong Hua, Kim, Doo-Hyun, Lee, Gil Sung, Sim, Won Bo, Lee, Jong-Duk, Park, Byung-Gook

Year:

2008

Language:

english

File:

PDF, 1.78 MB

english, 2008

20

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Jang-Gn Yun,, Soon-Young Oh,, Bin-Feng Huang,, Hee-Hwan Ji,, Yong-Goo Kim,, Seong-Hyung Park,, Heui-Seung Lee,, Dae-Byung Kim,, Ui-Sik Kim,, Han-Seob Cha,, Sang-Bum Hu,, Jeong-Gun Lee,, Su

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

21

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Fin flash memory cells with separated double gates

Jang-Gn Yun,, Yoon Kim,, Il Han Park,, Seongjae Cho,, Jung Hoon Lee,, Doo-Hyun Kim,, Gil Sung Lee,, Dong Hua Lee,, Se Hwan Park,, Wonbo Shim Jong-Duk Lee,, Byung-Gook Park,

Year:

2007

Language:

english

File:

PDF, 173 KB

english, 2007

22

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure

Lee, Gil Sung, Park, Il Han, Cho, Seongjae, Yun, Jang-Gn, Lee, Jung Hoon, Li, Dong Hua, Kim, Doo Hyun, Kim, Yoon, Park, Se Hwan, Sim, Won Bo, Lee, Jong Duk, Park, Byung-Gook

Year:

2008

Language:

english

File:

PDF, 1.48 MB

english, 2008

23

[IEEE 4th IEEE Conference on Nanotechnology, 2004. - Munich, Germany (16-19 Aug. 2004)] 4th IEEE Conference on Nanotechnology, 2004. - Highly thermal robust ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application

Jang-Gn Yun,, Soon-Young Oh,, Hee-Hwan Ji,, Bin-Feng Huang,, Seong-Kyung Park,, Heui-Seung Lee,, Dae-Byung Kim,, Ui-Sik Kim,, Han-Seob Cha,, Sang-Bum Hu,, Jeong-Gun Lee,, Hi-Deok Lee,

Year:

2004

Language:

english

File:

PDF, 290 KB

english, 2004

24

Thermal Stability Improvement of Ni–Germano silicide Utilizing Ni–Pd Alloy for Nanoscale CMOS Technology

Kim, Yong-Jin, Oh, Soon-Young, Yun, Jang-Gn, Lee, Won-Jae, Zhang, Ying-Ying, Zhong, Zhun, Jung, Soon-Yen, Ji, Hee-Hwan, Cha, Han-Seob, Kim, Yeong-Cheol, Wang, Jin-Suk, Lee, Hi-Deok

Journal:

IEEE Transactions on Nanotechnology

Year:

2007

Language:

english

File:

PDF, 2.13 MB

english, 2007

25

Array Structure

Yoon Kim,, Il Han Park,, Seongjae Cho,, Jang-Gn Yun,, Jung Hoon Lee,, Doo-Hyun Kim,, Gil Sung Lee,, Se-Hwan Park,, Dong Hua Lee,, Won Bo Sim,, Wandong Kim,, Hyungcheol Shin,, Jong-Duk Lee,

Journal:

IEEE Transactions on Nanotechnology

Year:

2010

Language:

english

File:

PDF, 4.88 MB

english, 2010

26

[IEEE kshop on Junction Technology - Osaka, Japan (2005.06.7-2005.06.8)] Extended Abstracts of the Fifth International Workshop on Junction Technology - Ni/Co/Ni/TiN structure for highly thermal immune NiSi for CMOSFETs application

Soon-Young Oh,, Jang-Gn Yun,, Yong-Jin Kim,, Won-Jae Lee,, Agchbayar Tuya,, Hee-Hwan Ji,, Ui-Sik Kim,, Han-Seob Cha,, Sang-Bum Heo,, Jeong-Gun Lee,, Gil-Jin Han,, Yoo Jeong Cho,, Yeong Che

Year:

2005

Language:

english

File:

PDF, 1.46 MB

english, 2005

27

[IEEE Extended Abstracts of the Fourth International Workshop on Junction Technology - Shanghai, China (15-16 March 2004)] The Fourth International Workshop on Junction Technology, 2004. IWJT '04. - Improvement of thermal stability of Ni germano-silicide for nano-scale CMOS technology

Bin-Feng Huang,, Soon-Young Oh,, Jang-Gn Yun,, Young-Ho Park,, Hee-Hwan Ji,, Yong-Goo Kim,, Jin-Suk Wang,, Han-Seob Cha,, Sang-Bum Heo,, Jeong-Gun Lee,, Yeong-Cheol Kim,, Hi-Deok Lee,

Year:

2004

Language:

english

File:

PDF, 270 KB

english, 2004

28

Cone-Type SONOS Flash Memory

Gil Sung Lee,, Jung Hoon Lee,, Il Han Park,, Seongjae Cho,, Jang-Gn Yun,, Dong Hwa Li,, Doo Hyun Kim,, Yoon Kim,, Se Hwan Park,, Won Bo Shim,, Wan Dong Kim,, Jong Duk Lee,, Hyungcheol Shin

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 532 KB

english, 2009

29

[IEEE 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Traverse City, MI, USA (2009.06.2-2009.06.5)] 2009 IEEE Nanotechnology Materials and Devices Conference - Effects of equivalent oxide thickness on bandgap-engineered SONOS flash memory

Li, Dong Hua, Park, Il Han, Seongjae Cho,, Yun, Jang-Gn, Lee, Jung Hoon, Doo-Hyun Kim,, Lee, Gil Sung, Yoon Kim,, Park, Se Hwan, Won Bo Shim,, Wandong Kim,, Park, Byung-Gook

Year:

2009

Language:

english

File:

PDF, 169 KB

english, 2009

30

Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability

Yun, Jang-Gn, Oh, Soon-Young, Huang, Bin-Feng, Kim, Yong-Jin, Ji, Hee-Hwan, Kim, Yong-Goo, Park, Sung-Hyung, Lee, Heui-Seung, Kim, Dae-Byung, Kim, Ui-Sik, Cha, Han-Seob, Hu, Sang-Bum, Lee, Jeong-Gun,

Journal:

IEEE Transactions on Nanotechnology

Year:

2007

Language:

english

File:

PDF, 1.62 MB

english, 2007

31

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Enhancement of erase speed using silicide drain in nanowire SONOS NAND flash memory

Wandong Kim,, Il Han Park,, Seongjae Cho,, Dong Hua Li,, Jang-Gn Yun,, Byung-Gook Park,

Year:

2009

Language:

english

File:

PDF, 255 KB

english, 2009

32

Various Flash Memory Devices of Novel Design

Yun, Jang-Gn, Lee, JongDuk, Park, Byung-Gook

Journal:

IETE Technical Review

Year:

2009

Language:

english

File:

PDF, 1.21 MB

english, 2009

33

Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Park, Jae Hyun, Song, Jae Young, Kim, Jong Pil, Kim, Sang Wan, Yun, Jang-Gn, Park, Byung-Gook

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 747 KB

english, 2010

34

Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure

Kim, Yong Jin, Choi, Chel Jong, Oh, Soon Young, Yun, Jang Gn, Lee, Won Jae, Ji, Hee Hwan, Wang, Jin Suk, Lee, Hi Deok

Journal:

Solid State Phenomena

Year:

2007

Language:

english

File:

PDF, 749 KB

english, 2007

35

The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide

Kim, Yong-Jin, Choi, Chel-Jong, Jung, Ran-Ju, Oh, Soon-Young, Yun, Jang-Gn, Lee, Won-Jae, Ji, Hee-Hwan, Wang, Jin-Suk, Lee, Hi-Deok

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 488 KB

english, 2006

36

Novel Ni Germanosilicide Technology Using N-Doped Ni and Ni Stack Structure for Nano CMOS Applications

Oh, Soon Young, Yun, Jang Gn, Kim, Yong Jin, Lee, Won Jae, Ji, Hee Hwan, Kim, Ui Sik, Cha, Han Seob, Heo, Sang Bum, Lee, Jeong Gun, Cho, Yoo Jeong, Han, Gil Jin, Kim, Yeong Cheul, Wang, Jin Suk, Lee,

Journal:

Solid State Phenomena

Year:

2007

Language:

english

File:

PDF, 832 KB

english, 2007

37

Abnormal Oxidation of NiSi Formed on Arsenic-Doped Substrate

Yun, Jang-Gn, Ji, Hee-Hwan, Oh, Soon-Young, Bae, Mi-Suk, Lee, Hun-Jin, Huang, Bin-Feng, Kim, Yong-Goo, Wang, Jin-Suk, Sung, Nak-Gyun, Hu, Sang-Bum, Lee, Jeong-Gun, Park, Seong-Hyung, Lee, Hee-Seung, H

Journal:

Electrochemical and Solid-State Letters

Year:

2004

Language:

english

File:

PDF, 120 KB

english, 2004

38

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Oh, Soon-Young, Yun, Jang-Gn, Huang, Bin-Feng, Kim, Yong-Jin, Ji, Hee-Hwan, Kim, Ui-Sik, Cha, Han-Seob, Heo, Sang-Bum, Lee, Jeong-Gun, Wang, Jin-Suk, Lee, Hi-Deok

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 344 KB

english, 2005

39

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Oh, Soon-Young, Yun, Jang-Gn, Kim, Yong-Jin, Lee, Won-Jae, Ji, Hee-Hwan, Tuya, Agchbayar, Kim, Do-Woo, Cha, Han-Seob, Cho, Yoo-Jeong, Han, Kil-Jin, Kim, Yeong-Cheul, Wang, Jin-Suk, Lee, Hi-Deok

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

40

Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell

Song, Jae Young, Kim, Jong Pil, Kim, Sang Wan, Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Sun, Min-Chul, Kim, Garam, Yun, Jang-Gn, Shin, Hyungcheol, Park, Byung-Gook

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 112 KB

english, 2010

41

Extended Word-Line NAND Flash Memory

Yun, Jang-Gn, Park, Il Han, Kim, Wandong, Lee, Jong Duk, Park, Byung-Gook

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 670 KB

english, 2009

42

Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure

Lee, Joung-Eob, Kim, Garam, Yun, Jang-Gn, Kang, Kwon-Chil, Lee, Jung-Han, Kim, Dae-Hwan, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.41 MB

english, 2010

43

Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

Lee, Joung-Eob, Kim, Garam, Wan, Kim Kyung, Shim, Won Bo, Lee, Jung-Han, Kang, Kwon-Chil, Yun, Jang-Gn, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.66 MB

english, 2010

44

Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

Bae, Mi-Suk, Ji, Hee-Hwan, Lee, Hun-Jin, Oh, Soon-Young, Huang, Bin-Feng, Yun, Jang-Gn, Wang, Jin-Suk, Park, Seong-Hyung, Lee, Hi-Deok

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 236 KB

english, 2004

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